PANJIT SemiConductor FET, MOSFET Arrays PJS6830_S1_00001

PJS6830 is a dual N-channel enhancement mode MOSFET in SOT-23-6 package, rated for 20 V drain-source voltage and 2 A continuous drain current, with on-state resistance below 150 mΩ at 4.5 V gate-source bias. It features ESD protection up to 2 kV HBM, operates from -55°C to 150°C, and meets RoHS 2.0 and IEC 61249 green molding standards. Thermal resistance is 100 °C/W junction-to-ambient. The part is designed for switch load and PWM applications and is supplied in 7" tape and reel packaging.