PANJIT SemiConductor Single Bipolar Transistors BC857AW-AU_R1_000A1

PNP general purpose transistor in SOT-323 package, rated for collector-emitter voltage up to 45 V, collector current of 100 mA, and power dissipation of 250 mW. Features DC current gain (hFE) of 150 to 450 at IC = -2 mA and VCE = -5 V, with collector-emitter saturation voltage up to 0.65 V at IC = -100 mA and IB = -5 mA. Junction and storage temperature range from -55 °C to 150 °C. Complies with RoHS 2011/65/EU and IEC 61249 halogen-free standards. Thermal resistance from junction to ambient is 500 °C/W when mounted on FR4 PCB with single-sided copper and mini pad. Current gain-bandwidth product is 200 MHz.