Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased ERJ-1GNF2200C

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased Package: 292-LBGA Product Status: Active Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Temperature Coefficient: ±1200ppm/°C Operating Temperature: -40°C ~ 85°C
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Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased Package: 292-LBGA Product Status: Active Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Temperature Coefficient: ±1200ppm/°C Operating Temperature: -40°C ~ 85°C
Request a Quote Datasheet

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased Package: 292-LBGA Product Status: Active Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Temperature Coefficient: ±1200ppm/°C Operating Temperature: -40°C ~ 85°C

Manufacturer: AMIS
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased
Package: 292-LBGA
Product Status: Active
Resistance (Ohms): 45k
Tolerance: ±20%
Power (Watts): 30 W
Composition: Wirewound
Temperature Coefficient: ±1200ppm/°C
Operating Temperature: -40°C ~ 85°C

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Package Type SOT3
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