Panasonic ECH8619-TL-E

The ECH8619 is a single-package combination of an N-channel and P-channel silicon MOSFET designed for general-purpose switching applications. It is housed in an 8-pin surface-mount package measuring 8.2 mm × 5.2 mm × 2.9 mm. The N-channel MOSFET has a drain-to-source voltage rating of 60 V and a typical on-state resistance of 93 mΩ at VGS=10 V and ID=1.5 A, while the P-channel MOSFET has a 60 V rating and a typical on-state resistance of 210 mΩ at VGS=-10 V and ID=-1 A. Both devices support 4 V gate drive and feature ultrahigh-speed switching with turn-on and turn-off delays under 100 ns. The device is rated for a maximum channel temperature of 150°C and can dissipate 1.3 W when mounted on a ceramic board (900 mm² × 0.8 mm). It is not rated for automotive or safety-critical applications. The part meets RoHS compliance.