N-Channel Silicon MOSFET in an MCPH3 package for general-purpose switching, rated for 60 V drain-to-source voltage, 200 mA continuous drain current, and 0.6 W power dissipation when mounted on a 900 mm² × 0.8 mm ceramic substrate. It supports 4 V gate drive, with RDS(on) of 2.6 Ω to 3.7 Ω at VGS=4 V and ID=50 mA, and operates with a channel temperature up to 150 °C. Typical total gate charge is 1.88 nC at VGS=10 V.
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N-Channel Silicon MOSFET in an MCPH3 package for general-purpose switching, rated for 60 V drain-to-source voltage, 200 mA continuous drain current, and 0.6 W power dissipation when mounted on a 900 mm² × 0.8 mm ceramic substrate. It supports 4 V gate drive, with RDS(on) of 2.6 Ω to 3.7 Ω at VGS=4 V and ID=50 mA, and operates with a channel temperature up to 150 °C. Typical total gate charge is 1.88 nC at VGS=10 V.
