Panasonic 3LN03M-TL-E

N-Channel Silicon MOSFET for general-purpose switching applications in a 3-pin MCP package, with a 30 V drain-to-source voltage rating, 0.35 A continuous drain current, and a maximum power dissipation of 0.15 W. It features a built-in gate-to-source protection diode, 2.5 V drive capability, and typical ESD tolerance of 300 V. Static on-state resistance ranges from 0.7 Ω at 4 V gate drive to 2.4 Ω at 1.5 V gate drive. Switching times are 8 ns turn-on delay, 4.5 ns rise time, 11 ns turn-off delay, and 6 ns fall time. Total gate charge is 1 nC at 4 V drive. Operating temperature range is from -55 °C to +150 °C.