N-Channel Silicon MOSFET for general-purpose switching applications, housed in a TO-220FI(LS) package measuring 10.0 mm × 4.5 mm × 2.8 mm. The device has a drain-to-source voltage rating of 500 V, a continuous drain current of 5.0 A at Tc=25°C, and a pulse drain current of 21 A. Its static drain-to-source on-state resistance ranges from 1.2 Ω to 1.56 Ω at ID=2.8 A and VGS=10 V. Input capacitance is 360 pF, output capacitance is 77 pF, and reverse transfer capacitance is 17 pF at VDS=30 V and f=1 MHz. The device guarantees 93.8 mJ of single-pulse avalanche energy with a peak avalanche current of 5.5 A. The channel temperature rating is 150 °C, and the storage temperature range is -55 °C to +150 °C.
N-Channel Silicon MOSFET For General Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4196LS |
| Polarity | N-Channel |