N-Channel Silicon MOSFET for general-purpose switching, housed in a TO-220FI(LS) package with dimensions of 10.0 mm length, 4.5 mm width, and 1.2 mm thickness. It has a drain-to-source voltage rating of 650 V, a continuous drain current of 5.6 A at Tc=25°C, and a pulse drain current of 24 A. The device exhibits a static drain-to-source on-state resistance of 1.05 to 1.35 Ω at VGS=10 V and ID=3 A, an input capacitance of 600 pF, and an avalanche energy rating of 105 mJ. It supports a channel temperature up to 150°C and includes guaranteed avalanche resistance. The part features low input capacitance and ultrahigh-speed switching, with switching times of 18 ns turn-on delay, 41 ns rise time, 78 ns turn-off delay, and 28 ns fall time under specified test conditions.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4100LS |
| Polarity | N-Channel |