N-Channel Power MOSFET with a 75V drain-to-source voltage rating and 100A continuous drain current, packaged in a TO-263-2L (SC-83) case measuring 10.0 mm by 9.0 mm. It has a typical ON-resistance of 4.6 mΩ at VGS=10V and 5.7 mΩ at VGS=4V, with an input capacitance of 12200 pF. The device supports a single-pulse avalanche energy of 735 mJ and an avalanche current of 70 A, with a maximum channel temperature of 150 °C.
N-Channel Silicon MOSFET For General Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4065-E |
| Polarity | N-Channel |
