Panasonic 2SK4065-E

Description
N-Channel Silicon MOSFET For General Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET For General Purpose Switching Device Applications
Request a Quote
Datasheet
Datasheet Summary
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N-Channel Power MOSFET with a 75V drain-to-source voltage rating and 100A continuous drain current, packaged in a TO-263-2L (SC-83) case measuring 10.0 mm by 9.0 mm. It has a typical ON-resistance of 4.6 mΩ at VGS=10V and 5.7 mΩ at VGS=4V, with an input capacitance of 12200 pF. The device supports a single-pulse avalanche energy of 735 mJ and an avalanche current of 70 A, with a maximum channel temperature of 150 °C.

Datasheet Summary
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N-Channel Power MOSFET with a 75V drain-to-source voltage rating and 100A continuous drain current, packaged in a TO-263-2L (SC-83) case measuring 10.0 mm by 9.0 mm. It has a typical ON-resistance of 4.6 mΩ at VGS=10V and 5.7 mΩ at VGS=4V, with an input capacitance of 12200 pF. The device supports a single-pulse avalanche energy of 735 mJ and an avalanche current of 70 A, with a maximum channel temperature of 150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4065-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General Purpose Switching Device Applications

N-Channel Silicon MOSFET For General Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4065-E
Polarity N-Channel
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