N-Channel Silicon MOSFET for general-purpose switching applications, including motor drive and DC/DC conversion. It features low ON-resistance, ultrahigh-speed switching, and 4V drive capability with avalanche resistance. Packaged in an SMP-FD case, it has a drain-to-source voltage rating of 60 V, continuous drain current of 74 A, and power dissipation of 75 W at Tc=25°C. The device meets AEC-Q200 qualification and RoHS standards. Typical on-state resistance is 10 to 18 mΩ depending on gate bias, with total gate charge of 100 nC at VGS=10V and ID=74A. Input capacitance is 5250 pF, output capacitance 780 pF, and reverse transfer capacitance 525 pF at VDS=20V and f=1MHz. Switching times are 38 ns delay on, 315 ns rise, 370 ns delay off, and 310 ns fall.
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3818-DL-E |
| Polarity | N-Channel |