N-channel silicon MOSFET for general-purpose switching applications, including motor drive and DC/DC conversion, in an SMP-FD package measuring 10.2 mm × 9.9 mm, with a 60 V drain-to-source voltage, 23 A continuous drain current, and 4 V drive capability; rated for 40 W dissipation at Tc=25°C and avalanche energy of 19.8 mJ.
N-Channel, MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3815-DL-E |
| Polarity | N-Channel |