Panasonic 2SJ645-TL-E

Description
P-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Description
P-Channel Silicon MOSFET For General-Purpose Switching Device Applications
Request a Quote
Datasheet
Datasheet Summary
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P-Channel Silicon MOSFET for general-purpose switching applications in a TO-252 package measuring 6.5 mm × 5.1 mm × 2.3 mm. It features a drain-source voltage rating of -20 V, continuous drain current of -8 A, and on-state resistance of 55 to 108 mΩ depending on gate voltage. The device supports 2.5 V gate drive and offers ultrahigh-speed switching with total gate charge of 8.7 nC. It meets AEC-Q200 qualification and is rated for a channel temperature of 150 °C and storage temperature from -55 °C to +150 °C.

Datasheet Summary
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P-Channel Silicon MOSFET for general-purpose switching applications in a TO-252 package measuring 6.5 mm × 5.1 mm × 2.3 mm. It features a drain-source voltage rating of -20 V, continuous drain current of -8 A, and on-state resistance of 55 to 108 mΩ depending on gate voltage. The device supports 2.5 V gate drive and offers ultrahigh-speed switching with total gate charge of 8.7 nC. It meets AEC-Q200 qualification and is rated for a channel temperature of 150 °C and storage temperature from -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SJ645-TL-E - Rochester Electronics
Newburyport, MA, United States
P-Channel Silicon MOSFET For General-Purpose Switching Device Applications

P-Channel Silicon MOSFET For General-Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SJ645-TL-E
Polarity P-Channel
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