P-Channel Silicon MOSFET for general-purpose switching applications in a TO-252 package measuring 6.5 mm × 5.1 mm × 2.3 mm. It features a drain-source voltage rating of -20 V, continuous drain current of -8 A, and on-state resistance of 55 to 108 mΩ depending on gate voltage. The device supports 2.5 V gate drive and offers ultrahigh-speed switching with total gate charge of 8.7 nC. It meets AEC-Q200 qualification and is rated for a channel temperature of 150 °C and storage temperature from -55 °C to +150 °C.
P-Channel Silicon MOSFET For General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SJ645-TL-E |
| Polarity | P-Channel |