Panasonic 2SD1835S-AA

Description
NPN Epitaxial Planar Silicon Transistor
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Description
NPN Epitaxial Planar Silicon Transistor
Request a Quote
Datasheet
Datasheet Summary
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The 2SD1835S-AA is an NPN bipolar transistor in an NP package, rated for a collector-to-emitter voltage of 50 V and a continuous collector current of 2 A, with a collector dissipation of 0.75 W and a junction temperature limit of 150°C. It features a low collector-to-emitter saturation voltage of 0.15 to 0.4 V at 1 A collector current and a DC current gain (hFE) range of 100 to 200 for the R bin. The device has a gain-bandwidth product of 150 MHz, turn-on time of 60 ns, storage time of 550 ns, and fall time of 30 ns. It complies with JEITA/JEDEC standards SC-34A, TO-92, TO-226AA, and SOT-54, and is packaged in 1,500-piece boxes. The part is Pb-free and rated for industrial temperature ranges.

Datasheet Summary
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The 2SD1835S-AA is an NPN bipolar transistor in an NP package, rated for a collector-to-emitter voltage of 50 V and a continuous collector current of 2 A, with a collector dissipation of 0.75 W and a junction temperature limit of 150°C. It features a low collector-to-emitter saturation voltage of 0.15 to 0.4 V at 1 A collector current and a DC current gain (hFE) range of 100 to 200 for the R bin. The device has a gain-bandwidth product of 150 MHz, turn-on time of 60 ns, storage time of 550 ns, and fall time of 30 ns. It complies with JEITA/JEDEC standards SC-34A, TO-92, TO-226AA, and SOT-54, and is packaged in 1,500-piece boxes. The part is Pb-free and rated for industrial temperature ranges.

Suppliers

Company
Product
Description
Supplier Links
 - 2SD1835S-AA - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Planar Silicon Transistor

NPN Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SD1835S-AA
Polarity NPN
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