Panasonic 2SC3595D

NPN epitaxial planar silicon transistor for ultrahigh-definition CRT display video output applications, housed in a TO-126 package. It has a collector-to-emitter voltage rating of 20 V, a collector current of 500 mA, and a gain-bandwidth product of 2.0 GHz. The DC current gain (hFE) is classified as 100 to 200 for the D variant at VCE=5 V and IC=50 mA. The junction temperature ranges from -55°C to 150°C, and the device meets standard silicon transistor performance characteristics for video amplification applications.