The 2SB1450 is a PNP epitaxial planar silicon transistor designed for switching applications, packaged in an SMP-FD surface-mount case measuring 10.2 mm × 9.9 mm × 2.0 mm. It has a maximum collector-to-emitter voltage of 50 V, collector current of 7 A, and collector dissipation of 40 W at Tc=25°C. The collector-to-emitter saturation voltage is 0.4 V at IC=4 A and IB=0.4 A. The DC current gain hFE ranges from 70 to 280 depending on grade, with gain-bandwidth product of 10 MHz at IC=1 A. Junction temperature ranges from -55°C to 150°C.
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The 2SB1450 is a PNP epitaxial planar silicon transistor designed for switching applications, packaged in an SMP-FD surface-mount case measuring 10.2 mm × 9.9 mm × 2.0 mm. It has a maximum collector-to-emitter voltage of 50 V, collector current of 7 A, and collector dissipation of 40 W at Tc=25°C. The collector-to-emitter saturation voltage is 0.4 V at IC=4 A and IB=0.4 A. The DC current gain hFE ranges from 70 to 280 depending on grade, with gain-bandwidth product of 10 MHz at IC=1 A. Junction temperature ranges from -55°C to 150°C.
