Panasonic Industry Europe GmbH Single Bipolar Transistors 2SC4004

Description
Bipolar (BJT) Transistor NPN 800V 1A 4MHz 2W Through Hole TO-220F-A1
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Description
Bipolar (BJT) Transistor NPN 800V 1A 4MHz 2W Through Hole TO-220F-A1
Request a Quote
Datasheet
Datasheet Summary
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The 2SC4004 is an NPN silicon power transistor designed for high-breakdown-voltage, high-speed switching applications. It is packaged in a TO-220F-A1 case with dimensions of 10.0±0.2 mm length, 5.5±0.2 mm width, and 3.1±0.1 mm diameter for the heat sink mounting hole. The device has a collector-emitter voltage rating of 800 V, collector current of 1 A, and peak collector current of 2 A. It dissipates up to 30 W at 25°C and operates with a junction temperature up to 150°C. The transition frequency is 4 MHz at 10 V and 0.05 A. The transistor meets JIS C 7030 testing standards and complies with RoHS Directive (EU 2002/95/EC).

Datasheet Summary
Powered by GS/AI

The 2SC4004 is an NPN silicon power transistor designed for high-breakdown-voltage, high-speed switching applications. It is packaged in a TO-220F-A1 case with dimensions of 10.0±0.2 mm length, 5.5±0.2 mm width, and 3.1±0.1 mm diameter for the heat sink mounting hole. The device has a collector-emitter voltage rating of 800 V, collector current of 1 A, and peak collector current of 2 A. It dissipates up to 30 W at 25°C and operates with a junction temperature up to 150°C. The transition frequency is 4 MHz at 10 V and 0.05 A. The transistor meets JIS C 7030 testing standards and complies with RoHS Directive (EU 2002/95/EC).

Suppliers

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Single Bipolar Transistors - 2SC4004-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC4004-ND
Single Bipolar Transistors 2SC4004-ND
Bipolar (BJT) Transistor NPN 800V 1A 4MHz 2W Through Hole TO-220F-A1

Bipolar (BJT) Transistor NPN 800V 1A 4MHz 2W Through Hole TO-220F-A1

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2SC4004-ND
Product Name Single Bipolar Transistors
Polarity NPN
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