Panasonic Industry Europe GmbH Single Bipolar Transistors 2SB1463JRL

PNP silicon epitaxial planar transistor for high breakdown voltage low-frequency amplification, in an SS-Mini type package measuring 5.1 mm x 1.6 mm. It has a collector-emitter voltage rating of -150 V, a collector current rating of -50 mA, a collector power dissipation of 125 mW, and a transition frequency of 200 MHz. The device is complementary to 2SD2240 and meets JIS C 7030 measurement standards.