The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2195 can deliver P3dB of 400 W at +48 V operation.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
| Qorvo | |
|---|---|
| Product Category | RF Transistors |
| Product Number | QPD2195 |
| Product Name | 400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor |
| Transistor Technology / Material | GaN |
