Panasonic Industry Europe GmbH Single Bipolar Transistors 2SA0963

Description
Bipolar (BJT) Transistor PNP 40V 1.5A 150MHz 10W Through Hole TO-126A-A1
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Description
Bipolar (BJT) Transistor PNP 40V 1.5A 150MHz 10W Through Hole TO-126A-A1
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Datasheet
Datasheet Summary
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The 2SA0963 is a silicon PNP bipolar transistor for low-frequency power amplification, housed in a TO-126A-A1 package. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -1.5 A, and a maximum collector power dissipation of 10 W at 25°C. The junction temperature ranges from -55°C to 150°C. The device has a forward current transfer ratio (hFE) between 80 and 220, depending on rank, and a transition frequency of 150 MHz. It is compliant with JIS C 7030 measuring standards.

Datasheet Summary
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The 2SA0963 is a silicon PNP bipolar transistor for low-frequency power amplification, housed in a TO-126A-A1 package. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -1.5 A, and a maximum collector power dissipation of 10 W at 25°C. The junction temperature ranges from -55°C to 150°C. The device has a forward current transfer ratio (hFE) between 80 and 220, depending on rank, and a transition frequency of 150 MHz. It is compliant with JIS C 7030 measuring standards.

Suppliers

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Supplier Links
Single Bipolar Transistors - 2SA0963-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA0963-ND
Single Bipolar Transistors 2SA0963-ND
Bipolar (BJT) Transistor PNP 40V 1.5A 150MHz 10W Through Hole TO-126A-A1

Bipolar (BJT) Transistor PNP 40V 1.5A 150MHz 10W Through Hole TO-126A-A1

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2SA0963-ND
Product Name Single Bipolar Transistors
Polarity PNP
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