The 2N7002E is a silicon N-channel MOSFET for switching circuits, housed in an SOT-23 (TO-236AA) package with dimensions of 2.9 mm × 1.3 mm × 1.0 mm. It has a drain-source voltage rating of 60 V, a continuous drain current of 300 mA, and a total power dissipation of 350 mW when mounted on an FR4 board with over 300 mm² copper area. The drain-source on-state resistance is typ. 1 Ω at VGS = 4.5 V and typ. 0.8 Ω at VGS = 10 V. The gate-source threshold voltage ranges from 1 V to 3 V. The device is RoHS compliant and meets UL 94 V-0 and MSL Level 1 standards.
N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N7002ETR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
