OSI Optoelectronics Silicon Avalanche Photodiode APD-900

Description
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.
Datasheet
Description
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Avalanche Photodiode - APD-900 - OSI Optoelectronics
Hawthorne, CA, United States
Silicon Avalanche Photodiode
APD-900
Silicon Avalanche Photodiode APD-900
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number APD-900
Product Name Silicon Avalanche Photodiode
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 350 to 1100 nm (3500 to 11000 Å)
Peak Sensitivity Wavelength 820 nm (8200 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

Integrating Sphere Detector, Diverging Beam, 5.3 in., 220-1100 nm - 819D-UV-5.3-CAL - Newport MKS
Specs
Spectral Response Range 200 to 1100 nm (2000 to 11000 Å)
View Details
Segmented InGaAs photodiodes - G6849-01 - Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
View Details
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Clairex Technologies, Inc.
Specs
Photodiode Material Silicon
Photodiode Package Leaded
Active Area Diameter or Length 3.17 mm (0.1250 inch)
View Details