ODG (Origin Data Global) Transistors MS8N100FE

Description
1kV 8A 1.8Ω@10V,4A 31.7W 5V@250μA 1 N-Channel TO-263 MOSFETs ROHS
Description
1kV 8A 1.8Ω@10V,4A 31.7W 5V@250μA 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - MS8N100FE - ODG (Origin Data Global)
Shenzhen, China
Transistors
MS8N100FE
Transistors MS8N100FE
1kV 8A 1.8Ω@10V,4A 31.7W 5V@250μA 1 N-Channel TO-263 MOSFETs ROHS

1kV 8A 1.8Ω@10V,4A 31.7W 5V@250μA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MS8N100FE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 223674061 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-40W,115 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
9 suppliers
Transistors TO39 - 94-2151(IR) - Karl Kruse GmbH & Co. KG
Infineon Technologies AG
Specs
Package Type TO-39
View Details
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details