The EPC2012C is a 200 V enhancement mode gallium nitride (eGaN®) FET in passivated die form with solder bars, designed for high-frequency power conversion applications. It has a maximum drain-source current of 5 A continuous and 22 A pulsed, with a drain-source on-resistance of 70 to 100 mΩ at 25°C and 5 V gate voltage. The gate-source voltage range is -4 V to 6 V, and the junction operating temperature ranges from -40°C to 150°C. Thermal resistance from junction to case is 4.2 °C/W and junction to board is 12.5 °C/W. The die has a recommended land pattern with four pads: gate, substrate (to be connected to source), drain, and source. The device meets moisture sensitivity level 1 per IPC/JEDEC and has zero reverse recovery charge.
GANFET N-CH 200V 5A DIE OUTLINE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2012C |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 200 volts |
