ODG (Origin Data Global) Transistors AUP065N10

Description
100V 76A 160W 7.9mΩ 2V 1 N-Channel TO-220 MOSFETs ROHS
  • Transistors - AUP065N10 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 76A 160W 7.9mΩ 2V 1 N-Channel TO-220 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AUP065N10 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AUP065N10
Transistors AUP065N10
100V 76A 160W 7.9mΩ 2V 1 N-Channel TO-220 MOSFETs ROHS

100V 76A 160W 7.9mΩ 2V 1 N-Channel TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AUP065N10
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 448-AIMBG75R060M2HXTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG75R060M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910027SAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY
ALD910027SAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE
2SA1208S-AE
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor - QPD3601 - Qorvo
Qorvo
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
QPD3601
Specs
Transistor Technology / Material GaN
Package Type NI-400
View Details