ODG (Origin Data Global) Transistors ASW60R029EFD

Description
605V 90A 330W 25mΩ 4V 1 N-Channel TO-247-3L MOSFETs ROHS
Description
605V 90A 330W 25mΩ 4V 1 N-Channel TO-247-3L MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - ASW60R029EFD - ODG (Origin Data Global)
Shenzhen, China
Transistors
ASW60R029EFD
Transistors ASW60R029EFD
605V 90A 330W 25mΩ 4V 1 N-Channel TO-247-3L MOSFETs ROHS

605V 90A 330W 25mΩ 4V 1 N-Channel TO-247-3L MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number ASW60R029EFD
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110914SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
IGBTs - 1251115 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type Semitrans3
View Details