onsemi Single FETs, MOSFETs UG4SC075009K4S

The UG4SC075009K4S is a silicon carbide (SiC) JFET integrated with a low-voltage silicon MOSFET in a TO247-4 package, designed to enable normally-off operation while leveraging SiC JFET performance. It features a 750 V drain-source voltage rating, a typical on-resistance of 8.4 mΩ at 25°C, and operates up to a maximum junction temperature of 175°C. The device supports continuous drain currents up to 106 A at ambient temperatures below 61°C and pulsed currents up to 344 A. Thermal resistance from junction to case is 0.31-0.40°C/W, and it includes silver-sintered die attach for enhanced thermal performance. The package dimensions are 15.90 mm × 20.96 mm × 5.03 mm, with a 5.44 mm pin pitch. It is RoHS compliant and suitable for solid-state circuit breakers, battery disconnects, and high-power switching applications.