onsemi Single FETs, MOSFETs UG4SC075006K4S

The UG4SC075006K4S is a silicon carbide (SiC) JFET and silicon MOSFET combo device integrated in a TO247-4 package measuring 15.90x20.96x5.03 mm, designed for high-power switching applications requiring normally-off operation. It features a 750 V drain-source breakdown voltage, a maximum continuous drain current of 120 A, and an on-resistance of 5.9 mΩ at 25°C. The device supports a maximum junction temperature of 175°C, has a thermal resistance of 0.16 to 0.21 °C/W, and is rated for a 5 μs short-circuit withstand time. It is RoHS compliant, Pb-free, and halogen-free.