onsemi Single FETs, MOSFETs UF3C120080K4S

The UF3C120080K4S is a silicon carbide (SiC) cascode JFET power switch in a TO247-4 package measuring 15.90 x 20.96 x 5.03 mm, designed for high-efficiency switching in applications such as EV charging, PV inverters, and motor drives. It features a 1200 V drain-source voltage rating, an on-resistance of 80 mΩ at 25 °C, and a maximum junction temperature of 175 °C. The device combines a SiC JFET with a cascode-optimized silicon MOSFET to enable standard gate drive compatibility and delivers low gate charge (43 nC), low reverse recovery charge (212 nC), and minimal switching losses. It is RoHS compliant, Pb-free, and halogen-free, with thermal resistance junction-to-case of 0.45 to 0.59 °C/W and ESD protection per HBM Class 2.