onsemi Single FETs, MOSFETs UF3C065080T3S

The UF3C065080T3S is a silicon carbide cascode JFET device in a TO220-3 package, measuring 10.16x15.37x4.19 mm, designed for high-efficiency switching applications such as EV charging, PV inverters, and motor drives. It features a 650 V drain-source voltage rating, 80 mΩ typical on-resistance, and continuous drain current of 31 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C, exhibits low gate charge and reverse recovery charge, and is RoHS compliant. Thermal resistance junction-to-case is 0.61-0.79 °C/W. The device is ESD protected (HBM Class 2) and requires an external RC snubber for optimal switching performance.