onsemi Single FETs, MOSFETs UF3C065080K3S

The UF3C065080K3S is a silicon carbide cascode FET device in a TO247-3 package measuring 15.90 x 20.96 x 5.03 mm, designed as a normally-off power switch with 650 V drain-source voltage and 80 mΩ typical on-resistance. It supports continuous drain current up to 31 A at 25 °C and pulsed current up to 65 A, with a maximum junction temperature of 175 °C. The device exhibits low gate charge of 51 nC, minimal reverse recovery charge of 119 nC, and ultra-low switching losses when used with recommended RC snubbers. It is Pb-free, halogen-free, and RoHS compliant, with ESD protection per HBM Class 2. Thermal resistance junction-to-case is 0.61 to 0.79 °C/W.