onsemi Single FETs, MOSFETs UF3C065030K3S

The UF3C065030K3S is a silicon carbide cascode JFET in a TO247-3 package, designed for high-efficiency switching in applications such as EV charging, PV inverters, and motor drives. It features a 650 V drain-source voltage rating, a typical on-resistance of 27 mΩ at 25°C, and a continuous drain current of 85 A at 25°C case temperature. The device operates with a maximum junction temperature of 175°C and exhibits low gate charge and reverse recovery characteristics. It is RoHS compliant and features an integrated reverse diode with a forward voltage of 1.3 V at 20 A. Thermal resistance from junction to case is 0.26-0.34 °C/W. The device is pin-compatible with standard silicon IGBTs and MOSFETs and requires an external RC snubber for optimal performance.