Infineon Technologies AG 2EDS8165HXUMA2

The 2EDS8165H is a dual-channel, reinforced isolated MOSFET gate driver with 8 A source and 8 A sink output current, designed for fast-switching applications using medium- to high-voltage MOSFETs. It features a propagation delay of 37 ns typ., a channel-to-channel mismatch of 3 ns, and a common-mode transient immunity exceeding 150 V/ns. The device supports output supply voltages from 4.5 V to 20 V and operates over a temperature range of -40°C to +150°C. It is packaged in a wide-body DSO-16 format with 8 mm typical creepage distance and meets reinforced isolation standards including DIN V VDE V 0884-10, UL1577 Ed. 5 with 5700 V RMS isolation voltage, and DIN EN IEC 62368-1. It is fully qualified to JEDEC standards for industrial applications.