onsemi TRANSISTORS - Transistors (BJT) - Single - TIP110 TIP110

Description
Manufacturer: ON Semiconductor Win Source Part Number: 054349-TIP110 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 2.5V @ 8mA, 2A Collector Cut-off Current(Max): 2mA Typical Gain (hFE) (Min): 1000 @ 1A, 4V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 054349-TIP110 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 2.5V @ 8mA, 2A Collector Cut-off Current(Max): 2mA Typical Gain (hFE) (Min): 1000 @ 1A, 4V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors (BJT) - Single - TIP110 - 054349-TIP110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - TIP110
054349-TIP110
TRANSISTORS - Transistors (BJT) - Single - TIP110 054349-TIP110
Manufacturer: ON Semiconductor Win Source Part Number: 054349-TIP110 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 2.5V @ 8mA, 2A Collector Cut-off Current(Max): 2mA Typical Gain (hFE) (Min): 1000 @ 1A, 4V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 054349-TIP110
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 2.5V @ 8mA, 2A
Collector Cut-off Current(Max): 2mA
Typical Gain (hFE) (Min): 1000 @ 1A, 4V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Single Bipolar Transistors - TIP110OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TIP110OS-ND
Single Bipolar Transistors TIP110OS-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 2A 2W Through Hole TO-220

Bipolar (BJT) Transistor NPN - Darlington 60V 2A 2W Through Hole TO-220

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Transistors Transistors
Product Number 054349-TIP110 TIP110OS-ND
Product Name TRANSISTORS - Transistors (BJT) - Single - TIP110 Single Bipolar Transistors
Polarity NPN; NPN - Darlington NPN
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