The SNXH225B95H3Q2F2PG-N1 is a high-density integrated power module combining IGBTs and anti-parallel diodes for use in solar inverters and UPS systems. It is housed in a Q2BOOST package (CASE 180AV) with press-fit pins. The IGBTs have a collector-emitter voltage rating of 950 V and a continuous collector current of 65 A at 80°C heatsink temperature. The module includes a 1200 V silicon carbide Schottky diode with a forward current of 28 A at 80°C. Maximum junction temperature is 175°C for IGBTs and 150°C for most diodes. The device meets isolation standards of 3400 VRMS with a creepage distance of 12.7 mm and a comparative tracking index greater than 600. Thermal resistance from junction to heatsink is 0.706 °C/W for IGBTs. The module is Pb-free and packaged in a blister tray with 12 units per tray.
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The SNXH225B95H3Q2F2PG-N1 is a high-density integrated power module combining IGBTs and anti-parallel diodes for use in solar inverters and UPS systems. It is housed in a Q2BOOST package (CASE 180AV) with press-fit pins. The IGBTs have a collector-emitter voltage rating of 950 V and a continuous collector current of 65 A at 80°C heatsink temperature. The module includes a 1200 V silicon carbide Schottky diode with a forward current of 28 A at 80°C. Maximum junction temperature is 175°C for IGBTs and 150°C for most diodes. The device meets isolation standards of 3400 VRMS with a creepage distance of 12.7 mm and a comparative tracking index greater than 600. Thermal resistance from junction to heatsink is 0.706 °C/W for IGBTs. The module is Pb-free and packaged in a blister tray with 12 units per tray.
