60-V, N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150
N-Channel 60V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 60V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 60V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6)
MOSFET N-CH 60V 100A 8VSON
Manufacturer: Texas Instruments
Win Source Part Number: 013374-CSD18532Q5B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Family Name: CSD18532Q5B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 5070pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SiR688DP-T1-GE3; BSC039N06NS; BSC039N06NSATMA1; BSC034N06NS;
Introduction Date: December 18, 2012
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control, Industrial
MOSFET, N CHANNEL, 60V, 100A, 0.0025OHM, SON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, N-CH, 60V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 100A 8VSON
MOSFET 60-V N-Ch NexFET Pwr MOSFET
| Texas Instruments | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD18532Q5B | 296-35628-1-ND | CSD18532Q5B | 013374-CSD18532Q5B | 63W5308 | 29AH3837 | CSD18532Q5B | CSD18532Q5B |
| Product Name | CSD18532Q5B 60-V, N-Channel NexFET? Power MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18532Q5B | Mosfet, N Channel, 60V, 100A, 0.0025Ohm, Son-8; Transistor Polarity Texas Instruments | Mosfet, N-Ch, 60V, 100A, Vson-8; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| rDS(on) | 0.0043 ohms | 0.0025 ohms | 0.0025 ohms | |||||
| IDSS | 143000 milliamps | 100000 milliamps | 100000 milliamps | 100000 milliamps | ||||
| QG | 44 nC |
