onsemi IGBT Modules SNXH100M65L4Q2F2P2G-N1

Description
IGBT MOD 650V 113A 226W 40-PIM
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Description
IGBT MOD 650V 113A 226W 40-PIM
Request a Quote
Datasheet
Datasheet Summary
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The SNXH100M65L4Q2F2P2G is a 650 V, 100 A three-phase inverter module in a Q2PACK package with press-fit pins, designed for applications such as solar inverters and uninterruptible power supplies. It integrates high-performance IGBTs and anti-parallel diodes using trench with field stop technology. The module has a maximum junction temperature of 175 °C, an isolation test voltage of 2500 Vrms, and a creepage distance of 12.7 mm. Thermal resistance from junction to heatsink ranges from 0.28 °C/W to 0.54 °C/W depending on the device section. The module includes an NTC thermistor with 22 kΩ at 25 °C and a B-value of 3950 °C. It is RoHS compliant and Pb-free.

Datasheet Summary
Powered by GS/AI

The SNXH100M65L4Q2F2P2G is a 650 V, 100 A three-phase inverter module in a Q2PACK package with press-fit pins, designed for applications such as solar inverters and uninterruptible power supplies. It integrates high-performance IGBTs and anti-parallel diodes using trench with field stop technology. The module has a maximum junction temperature of 175 °C, an isolation test voltage of 2500 Vrms, and a creepage distance of 12.7 mm. Thermal resistance from junction to heatsink ranges from 0.28 °C/W to 0.54 °C/W depending on the device section. The module includes an NTC thermistor with 22 kΩ at 25 °C and a B-value of 3950 °C. It is RoHS compliant and Pb-free.

Suppliers

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Product
Description
Supplier Links
IGBT Modules - 488-SNXH100M65L4Q2F2P2G-N1-ND - DigiKey
Thief River Falls, MN, United States
IGBT MOD 650V 113A 226W 40-PIM

IGBT MOD 650V 113A 226W 40-PIM

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 488-SNXH100M65L4Q2F2P2G-N1-ND
Product Name IGBT Modules
Package Type Module
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