NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: SMMUN2214LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-SMMUN2214LT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 064986-SMMUN2214LT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 246mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
TRANS PREBIAS NPN 50V SOT23
Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
TRANS PREBIAS NPN 50V SOT23-3
NPN Bipolar Digital Transistor (BRT) / REEL
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 292-SMMUN2214LT1G | 064986-SMMUN2214LT1G | SMMUN2214LT1GOSTR-ND | SMMUN2214LT1G | SMMUN2214LT1G | SMMUN2214LT1G | 76T7329 |
| Product Name | SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - SMMUN2214LT1G | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Npn Bipolar Digital Transistor (Brt) / Reel Onsemi |
| Polarity | NPN | NPN; NPN - Pre-Biased | NPN | NPN - Pre-Biased; NPN | NPN | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| PD | 246 milliwatts | ||||||
| TJ | -55 C (-67 F) |
