onsemi QSC114C

Description
Photo Transistor, 880nm
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Description
Photo Transistor, 880nm
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Datasheet
Datasheet Summary
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The QSC112, QSC113, and QSC114 are silicon infrared phototransistors in a black T-1 plastic package measuring 0.193 inches in length and 0.116 inches in diameter. They operate from -40°C to +100°C, with a maximum collector-emitter voltage of 30 V and a power dissipation of 100 mW. The QSC114 has a typical on-state collector current of 4.00 mA at 0.5 mW/cm² irradiance and 5 V collector-emitter voltage. The peak sensitivity wavelength is 880 nm, with a reception angle of ±4°. Soldering withstands 260°C for 10 seconds in flow soldering.

Datasheet Summary
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The QSC112, QSC113, and QSC114 are silicon infrared phototransistors in a black T-1 plastic package measuring 0.193 inches in length and 0.116 inches in diameter. They operate from -40°C to +100°C, with a maximum collector-emitter voltage of 30 V and a power dissipation of 100 mW. The QSC114 has a typical on-state collector current of 4.00 mA at 0.5 mW/cm² irradiance and 5 V collector-emitter voltage. The peak sensitivity wavelength is 880 nm, with a reception angle of ±4°. Soldering withstands 260°C for 10 seconds in flow soldering.

Suppliers

Company
Product
Description
Supplier Links
 - QSC114C - Rochester Electronics
Newburyport, MA, United States
Photo Transistor, 880nm

Photo Transistor, 880nm

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number QSC114C
Package Type T-1 PACKAGE-2
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