onsemi FET, MOSFET Arrays NXH003P120M3F2PTNG

The NXH003P120M3F2PTNG is a 1200 V silicon carbide MOSFET half-bridge power module with a 3 mΩ on-resistance, designed for high-efficiency applications such as solar inverters, electric vehicle charging stations, and industrial power systems. It is housed in an F2 package (Case 180BY) measuring 56.7 mm × 42.5 mm × 12.0 mm, featuring press-fit pins and a pre-applied thermal interface material. The module includes an integrated thermistor for temperature monitoring and uses a Si3N4 DBC substrate with a thickness of 0.38 mm. Maximum continuous drain current is 435 A at 80°C case temperature, with a peak pulsed current of 870 A. The junction operating temperature range is -40°C to 150°C, and the device meets RoHS requirements. Isolation test voltage is 4800 VRMS, with a creepage distance of 12.7 mm.