SiC 3-phase bridge power module for on-board charger applications in xEV systems, featuring a 1200 V drain-to-source voltage rating, 55 A continuous drain current, and 40 mΩ maximum on-resistance at 20 V gate bias and 25°C. Housed in an APM32 package measuring 44.00 mm × 28.30 mm, it operates with a junction temperature range of -55°C to 175°C and meets AEC-Q101 and AQG324 automotive qualification standards. Thermal resistance junction-to-case is 0.37°C/W typical, and it includes two NTC thermistors for temperature monitoring. The module is lead-free, RoHS compliant, and UL94V-0 rated.
MOSFET 6N-CH 1200V 55A APM32
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 5556-NVXK2VR40WXT2-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | "32-PowerDIP Module (1.449"", 36.80mm)" |
