Infineon Technologies AG Single IGBTs AIKQB160N75CP2ALSA1

Description
AIKQB160N75CP2ALSA1
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Description
AIKQB160N75CP2ALSA1
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Datasheet
Datasheet Summary
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The AIKQB160N75CP2 is a 750 V EDT2 IGBT with a 160 A continuous collector current, co-packed with a soft and fast recovery diode, designed for automotive traction inverters and DC-link discharge applications. It features a TO247PLUS package with a 6.6 mm creepage distance and resistive weldable pins for direct busbar connections. The device supports reflow soldering up to 260°C per JEDEC J-STD-020 MSL2 and is qualified to AEC-Q101 for automotive use. It has a typical collector-emitter saturation voltage of 1.4 V at 160 A and 25°C, a short-circuit withstand time of 5 µs at 470 V, and low thermal resistance of 0.15-0.21 K/W from junction to case. The package enables easy paralleling with a positive thermal coefficient and tight parameter distribution.

Datasheet Summary
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The AIKQB160N75CP2 is a 750 V EDT2 IGBT with a 160 A continuous collector current, co-packed with a soft and fast recovery diode, designed for automotive traction inverters and DC-link discharge applications. It features a TO247PLUS package with a 6.6 mm creepage distance and resistive weldable pins for direct busbar connections. The device supports reflow soldering up to 260°C per JEDEC J-STD-020 MSL2 and is qualified to AEC-Q101 for automotive use. It has a typical collector-emitter saturation voltage of 1.4 V at 160 A and 25°C, a short-circuit withstand time of 5 µs at 470 V, and low thermal resistance of 0.15-0.21 K/W from junction to case. The package enables easy paralleling with a positive thermal coefficient and tight parameter distribution.

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Single IGBTs - 448-AIKQB160N75CP2ALSA1-ND - DigiKey
Thief River Falls, MN, United States
AIKQB160N75CP2ALSA1

AIKQB160N75CP2ALSA1

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Technical Specifications

  DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 448-AIKQB160N75CP2ALSA1-ND
Product Name Single IGBTs
TJ -40 to 175 C (-40 to 347 F)
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