onsemi FET, MOSFET Arrays NVXK2TR40WXT

The NVXK2TR40WXT is a Silicon Carbide (SiC) MOSFET H-bridge power module in the APM32 series, designed for on-board charger (OBC) and DC-DC converter applications in xEV systems. It features a 1200 V drain-to-source voltage rating, a maximum continuous drain current of 55 A, and a typical on-resistance of 40 mΩ at 20 V gate voltage and 25°C. The module is housed in a compact APM32 package with 32 pins, including two NTC thermistor pins for temperature monitoring. It supports gate-to-source voltages of +20 V / -5 V and has a maximum junction temperature of 175°C. The device is automotive qualified per AEC-Q101 and AQG324, RoHS compliant, and meets UL 94 V-0 flammability standard. Thermal resistance junction-to-case is 0.37 °C/W typically, and single pulse avalanche energy is rated at 338 mJ.