onsemi Single FETs, MOSFETs NVMYS016N06CTWG

The NVMYS016N06CTWG is a 60 V, 33 A N-channel MOSFET in an LFPAK4 (5x6 mm) package, designed for efficient power switching with low conduction and driver losses. It has a maximum on-resistance of 16 mΩ at 10 V gate voltage and is AEC-Q101 qualified and PPAP capable. The device is Pb-free and RoHS compliant, with a continuous drain current of 33 A at TC = 25°C and 10.9 A at TA = 25°C. Its junction temperature range is -55°C to +175°C, and it meets thermal resistance specifications of 4.2°C/W junction-to-case and 39.5°C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu FR4 board. The part is shipped in tape and reel packaging.