NVMFS5C456NLAFT1G-YE is an N-channel MOSFET in the NVMFS5C456NL series, designed for power switching applications. It is packaged in a DFN5 case (5.00×6.00 mm) with a wettable flank option for enhanced optical inspection. The device has a drain-source breakdown voltage of 40 V, a maximum continuous drain current of 87 A at 25 °C case temperature, and an on-resistance of 3.7 mΩ at 10 V gate drive. It is AEC-Q101 qualified, RoHS compliant, and features a maximum junction temperature of 175 °C. Thermal resistance is 2.7 °C/W junction-to-case and 42 °C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu pad.
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NVMFS5C456NLAFT1G-YE is an N-channel MOSFET in the NVMFS5C456NL series, designed for power switching applications. It is packaged in a DFN5 case (5.00×6.00 mm) with a wettable flank option for enhanced optical inspection. The device has a drain-source breakdown voltage of 40 V, a maximum continuous drain current of 87 A at 25 °C case temperature, and an on-resistance of 3.7 mΩ at 10 V gate drive. It is AEC-Q101 qualified, RoHS compliant, and features a maximum junction temperature of 175 °C. Thermal resistance is 2.7 °C/W junction-to-case and 42 °C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu pad.
