Manufacturer: ON Semiconductor
Win Source Part Number: 261642-NVMFD5877NLWF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: NVMFD5877NLWF
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr
Maximum Power Dissipation: 3.2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 540pF @ 25V
Maximum Rds On at Id,Vgs: 39 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): NVMFD5877NLWFT3G;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
MOSFET 2N-CH 60V 6A SO8FL
Dual N-Channel Logic Level Power MOSFET 60V, 17A, 39mΩ, DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL Product overview: NVMFD5877NLWFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 17A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5877NLWFT1G
MOSFET 2N-CH 60V 6A 8DFN
MOSFET Pwr MOSFET 60V 17A 39mOhmDual N-CH
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 261642-NVMFD5877NLWFT1G | NVMFD5877NLWFT1GOSTR-ND | NVMFD5877NLWFT1G | 289-NVMFD5877NLWFT1G | NVMFD5877NLWFT1G | NVMFD5877NLWFT1G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5877NLWFT1G | FET, MOSFET Arrays | FET, MOSFET Arrays | N-Channel Dual 60V 17A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 3200 milliwatts | 3200 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | |||
| Package Type | SOT3; 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN | 8-PowerTDFN | Automotive |