Manufacturer: ON Semiconductor
Win Source Part Number: 1084110-NVD5805NT4G-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 47W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 1725pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
SINGLE N-CHANNEL POWER MOSFET 40
Single N-Channel Power MOSFET 40V, 51A, 9.5mΩ, 2500-REEL Product overview: NVD5805NT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 51A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-NVD5805NT4G-VF0
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1084110-NVD5805NT4G-VF01 | 488-NVD5805NT4G-VF01-ND | 2088-NVD5805NT4G-VF01 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5805NT4G-VF01 | Single FETs, MOSFETs | N-Channel 40V 51A MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 40 volts | ||
| PD | 47000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |