onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5805NT4G-VF01 NVD5805NT4G-VF01

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084110-NVD5805NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084110-NVD5805NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Product
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5805NT4G-VF01 - 1084110-NVD5805NT4G-VF01 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5805NT4G-VF01
1084110-NVD5805NT4G-VF01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5805NT4G-VF01 1084110-NVD5805NT4G-VF01
Manufacturer: ON Semiconductor Win Source Part Number: 1084110-NVD5805NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 47W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1084110-NVD5805NT4G-VF01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 47W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 1725pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 488-NVD5805NT4G-VF01-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NVD5805NT4G-VF01-ND
Single FETs, MOSFETs 488-NVD5805NT4G-VF01-ND
SINGLE N-CHANNEL POWER MOSFET 40

SINGLE N-CHANNEL POWER MOSFET 40

Buy Now Datasheet
Singapore
N-Channel 40V 51A MOSFET Transistor
2088-NVD5805NT4G-VF01
N-Channel 40V 51A MOSFET Transistor 2088-NVD5805NT4G-VF01
Single N-Channel Power MOSFET 40V, 51A, 9.5mΩ, 2500-REEL Product overview: NVD5805NT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 51A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-NVD5805NT4G-VF0 1 can be used for catalog matching and distributor lookup.

Single N-Channel Power MOSFET 40V, 51A, 9.5mΩ, 2500-REEL Product overview: NVD5805NT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 51A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-NVD5805NT4G-VF01 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1084110-NVD5805NT4G-VF01 488-NVD5805NT4G-VF01-ND 2088-NVD5805NT4G-VF01
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5805NT4G-VF01 Single FETs, MOSFETs N-Channel 40V 51A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 47000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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