onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5407NT4G NVD5407NT4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1102898-NVD5407NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 7.6A (Ta), 38A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1000pF @ 32V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1102898-NVD5407NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 7.6A (Ta), 38A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1000pF @ 32V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5407NT4G - 1102898-NVD5407NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5407NT4G
1102898-NVD5407NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5407NT4G 1102898-NVD5407NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1102898-NVD5407NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 7.6A (Ta), 38A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1000pF @ 32V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1102898-NVD5407NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.6A (Ta), 38A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1000pF @ 32V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NVD5407NT4G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVD5407NT4G-ND
Single FETs, MOSFETs NVD5407NT4G-ND
MOSFET N-CH 40V 7.6A/38A DPAK

MOSFET N-CH 40V 7.6A/38A DPAK

Buy Now Datasheet
Single FETs, MOSFETs - NVD5407NT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVD5407NT4G
Single FETs, MOSFETs NVD5407NT4G
MOSFET N-CH 40V 7.6A/38A DPAK

MOSFET N-CH 40V 7.6A/38A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVD5407NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVD5407NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVD5407NT4G
MOSFET N-CH 40V 7.6A/38A DPAK

MOSFET N-CH 40V 7.6A/38A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET DPAK 40V SPCL TR

MOSFET NFET DPAK 40V SPCL TR

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102898-NVD5407NT4G NVD5407NT4G-ND NVD5407NT4G NVD5407NT4G NVD5407NT4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5407NT4G Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 2900 to 75000 milliwatts 2900 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); DPAK-3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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