Manufacturer: ON Semiconductor
Win Source Part Number: 1102898-NVD5407NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 7.6A (Ta), 38A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1000pF @ 32V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 40V 7.6A/38A DPAK
MOSFET N-CH 40V 7.6A/38A DPAK
MOSFET N-CH 40V 7.6A/38A DPAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1102898-NVD5407NT4G | NVD5407NT4G-ND | NVD5407NT4G | NVD5407NT4G | NVD5407NT4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5407NT4G | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | |||
| PD | 2900 to 75000 milliwatts | 2900 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3; TO-252 (DPAK); DPAK-3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
