N-Ch Power MOSFET 60V 37A 11.5mR WDFN8 Product overview: NTTFS5820NLTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 37A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 37A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS5820NLTAG can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 11A/37A 8WDFN
N-Channel 60V 11A (Ta), 37A (Tc) 2.7W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Manufacturer: ON Semiconductor
Win Source Part Number: 1232663-NTTFS5820NLT
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerWDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
Family Name: NTTFS5820NL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-WDFN (3.3x3.3)
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1462pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.7W (Ta), 33W (Tc)
Rds On (Maximum) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V
Alternative Parts (Cross-Reference): RQ3L090GNTB; PSMN014-60LS; PSMN014-60LS,115;
Introduction Date: February 09, 2010
ECCN: EAR99
Country of Origin: Malaysia, United States of America
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 11A/37A 8WDFN
MOSFET Single N-CH 60V 11A, 37A
MOSFET Single N-CH 60V 11A, 37A
MOSFET, N CHANNEL, 60V, 0.0101OHM, 37A, WDFN-8, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:37A; On Resistance Rds(on):0.0101ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 0.0101OHM, 37A, WDFN-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:37A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:33W RoHS Compliant: Yes
MOSFET Transistor, N Channel, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTTFS5820NLTAG | NTTFS5820NLTAG | NTTFS5820NLTAGOSTR-ND | 1232663-NTTFS5820NLTAG | NTTFS5820NLTAG | 598-NTTFS5820NLTAG | NTTFS5820NLTAG | 79R3546 | 85W3192 | 90W9318 |
| Product Name | 60V 37A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Electrical Parts - NTTFS5820NLTAG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET Single N-CH 60V 11A, 37A | MOSFET | Mosfet, N Channel, 60V, 0.0101Ohm, 37A, Wdfn-8, Full Reel; Transistor Polarity Onsemi | Mosfet, N Channel, 60V, 0.0101Ohm, 37A, Wdfn-8; Channel Type Onsemi | Mosfet Transistor, N Channel, 37 A, 60 V, 0.0101 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| PD | 33000 milliwatts | 2700 milliwatts | 2700 to 33000 milliwatts | 33000 milliwatts | 33000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||
| V(BR)DSS | 60 volts | 60 volts |
