onsemi Single FETs, MOSFETs NTTFS4985NFTAG

Description
N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.73W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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Description
N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.73W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Request a Quote Datasheet

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Single FETs, MOSFETs - NTTFS4985NFTAGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4985NFTAGOSTR-ND
Single FETs, MOSFETs NTTFS4985NFTAGOSTR-ND
N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.73W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.73W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4985NFTAG - 112806-NTTFS4985NFTAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4985NFTAG
112806-NTTFS4985NFTAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4985NFTAG 112806-NTTFS4985NFTAG
Manufacturer: ON Semiconductor Win Source Part Number: 112806-NTTFS4985NFTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.47W (Ta), 22.73W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16.3A (Ta), 64A (Tc) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 29.4nC @ 10V Max Input Capacitance: 2075pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 112806-NTTFS4985NFTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.47W (Ta), 22.73W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-WDFN (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16.3A (Ta), 64A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 29.4nC @ 10V
Max Input Capacitance: 2075pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET NFET U8FL 30V 64A 5.2MOHM

MOSFET NFET U8FL 30V 64A 5.2MOHM

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTTFS4985NFTAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTTFS4985NFTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTTFS4985NFTAG
MOSFET N-CH 30V 16.3A/64A 8WDFN

MOSFET N-CH 30V 16.3A/64A 8WDFN

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTTFS4985NFTAGOSTR-ND 112806-NTTFS4985NFTAG NTTFS4985NFTAG NTTFS4985NFTAG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4985NFTAG MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerWDFN SOT3; 8-WDFN (3.3x3.3) 2075 pF @ 15 V
V(BR)DSS 30 volts
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