onsemi FET, MOSFET Arrays NTMFD5877NLT1G

The NTMFD5877NLT1G is a dual N-channel MOSFET in a DFN8 5x6 mm package designed for power switching applications. It features a drain-source voltage rating of 60 V, a continuous drain current of 17 A at 25°C ambient, and a maximum RDS(on) of 39 mΩ at 10 V gate drive. The device meets RoHS standards and is Pb-free and halogen-free. Thermal resistance is 6.5 °C/W junction-to-mounting board and 47 °C/W junction-to-ambient. The package is surface-mounted on FR4 with a 650 mm², 2 oz copper pad. Switching performance includes a total gate charge of up to 20 nC at 10 V drive. It is qualified for operation from −55 °C to +175 °C junction temperature.